Smith, George E. 1930-
Oral history interview with George E. Smith, 2001 January 17.
Interview includes these topics: Family and educational background, Bell Labs, Graduate school fellowship, Willard S. Boyle's research department; electronic structure of solids, Device Concepts group; semiconductor device and bipolar transistors research, Electroluminescence, Charge-coupled device (CCD) and the picture phone, Metal gate transistor for CCD, development and applications, Manufacturing and picture phone market; Bell stops CCD research, Department management; Fine Device Laboratory, Shifts in device technologies, 1960s-1980s, Speculation on areas for additional research, IEEE; Electron Device Society and Device Research Conference, Electron Device Letters, Retirement.
Smith received his doctorate in physics from the University of Chicago. He worked for Bell Laboratories from 1959 to 1986. Won Nobel prize for physics in 2009.
Boyle, Willard S. 1924-
Smith, George E. 1930-
Institute of Electrical and Electronics Engineers.
Transistors.
Charge coupled devices.
Semiconductor industry -- United States.
Interviews. aat
Oral histories. aat
Transcripts. aat
Morton, David, 1965- interviewer.
AIP-ICOS
Rutgers University. IEEE History Center. 39 Union Street, New Brunswick, NJ 08901, USA